发明名称 HOLLOW CATHODE PLASMA SOURCE
摘要 The present invention relates to a hollow cathode plasma source and to methods for surface treating or coating using such a plasma source, comprising first and second electrodes (1, 2), each electrode comprising an elongated cavity (4), wherein dimensions for at least one of the following parameters is selected so as to ensure high electron density and/or low amount of sputtering of plasma source cavity surfaces, those parameters being cavity cross section shape, cavity cross section area cavity distance (11), and outlet nozzle width (12).
申请公布号 WO2016089424(A1) 申请公布日期 2016.06.09
申请号 WO2014US68858 申请日期 2014.12.05
申请人 AGC GLASS EUROPE, S.A.;AGC FLAT GLASS NORTH AMERICA, INC.;ASAHI GLASS CO., LTD. 发明人 BIQUET, THOMAS;MASCHWITZ, PETER;CHAMBERS, JOHN;WIAME, HUGHES
分类号 H05H1/24 主分类号 H05H1/24
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