| 摘要 |
PROBLEM TO BE SOLVED: To reduce LPD of an SIMOX wafer which is available. SOLUTION: The method for manufacturing an SIMOX wafer includes, in the following order: a step in which, with a silicon wafer 11 heated to 200-600°C, oxygen ion is implanted from the surface of the wafer 11 to form a first ion implantation layer 12 at a first depth position from the wafer 11 surface; a step in which oxygen ion is implanted from the surface of the wafer 11 where the first ion implantation layer 12 is formed at a temperature lower than the heating temperature, to form a second ion implantation layer 13 of amorphous at a second depth position from the surface of the wafer 11, being shallower than the first depth; and a high temperature thermal treatment step in which the wafer 11 is held for 6-36 hours at the temperature equal to 1,300°C or higher but lower than melting point of silicon in the atmosphere containing oxygen so that the first and second ion implantation layers 12 and 13 come to be a BOX layer 15. Implantation of oxygen ion in the step of forming the first ion implantation layer 12 is performed at a plurality of stages, namely 4 steps to 10 steps. COPYRIGHT: (C)2010,JPO&INPIT |
