Group III-nitride layers with patterned surfaces

摘要

A method, is provided comprising:
providing a substrate with a planar surface;
forming a crystalline layer of a group III-nitride over the surface of the substrate; and
subjecting the layer to an aqueous solution of base to etch the layer such that a plurality of pyramids are formed on a first lateral region of the layer and are not formed on a second lateral region of the layer.