发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that comprises a plurality of kinds of transistors with different device structures in accordance with a function of a circuit.SOLUTION: First to third transistors having different device structures are provided on the same substrate. A semiconductor layer of the first transistor consists of an oxide semiconductor film with a lamination structure, and each of semiconductor layers of the second and third transistors consists of an oxide semiconductor film with a single layer structure. In addition, each of the first and second transistors has a back gate electrode connected with a gate electrode.SELECTED DRAWING: Figure 2
申请公布号 JP2016184764(A) 申请公布日期 2016.10.20
申请号 JP20160132539 申请日期 2016.07.04
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;OKAZAKI KENICHI;KATAYAMA MASAHIRO
分类号 H01L29/786 主分类号 H01L29/786
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