摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that comprises a plurality of kinds of transistors with different device structures in accordance with a function of a circuit.SOLUTION: First to third transistors having different device structures are provided on the same substrate. A semiconductor layer of the first transistor consists of an oxide semiconductor film with a lamination structure, and each of semiconductor layers of the second and third transistors consists of an oxide semiconductor film with a single layer structure. In addition, each of the first and second transistors has a back gate electrode connected with a gate electrode.SELECTED DRAWING: Figure 2 |