| 摘要 |
1307036 Diffusion into semi-conductors SIEMENS AG 11 May 1971 [15 May 1970] 14349/71 Heading H1K Silicon or germanium wafers are doped with antimony and/or bismuth by a process in which an antimony compound and/or a bismuth compound is/are volatilized into a nitrogen or argon carrier stream and this is mixed immediately adjacent the inlet to the monozone diffusion furnace with a stream of oxidizing gas (oxygen), the mixture being passed over the heated wafers. The dopant compounds are chosen from SbR 3 , SbR 5 , BiR 3 , and BiR 5 where R is alkyl or aryl; such compounds where at least some R are halogen-substituted or are replaced by halogen; (SiH 3 ) 3 Sb; and (CH 3 ) 2 Sb.O.Sb(CH 3 ) 2 . |
