发明名称 PROCESS FOR EPITAZIAL GROWTH OF DIAMONDS
摘要 A method for growing diamonds in the form of diamond dust, industrial grade diamonds and the like, by epitaxy comprising the steps of providing a diamond seed crystal, contacting said diamond seed crystal with a hydrocarbon having from one to about five carbon atoms in an environment consisting of at least 95 percent hydrogen gas by volume and about no more than 5 percent of the said hydrocarbon by volume, maintaining the temperature of the reaction environment in the range of from about 1,100 DEG C. to about 1,700 DEG C., and reacting the said diamond seed crystal with the said hydrocarbon and the hydrogen gas in the presence of a catalyst being a member selected from the group consisting of platinum and paladium, thereby causing said hydrocarbon to form diamond carbon and deposit it on the surface of said diamond seed crystal while simultaneously causing less stable forms of carbon also formed from said hydrocarbon to react with the hydrogen gas in the presence of the catalyst and the temperature conditions to form additional quantities of hydrocarbon, said process continuing until the desired diamond growth has been achieved.
申请公布号 ZA7202860(B) 申请公布日期 1973.02.28
申请号 ZA19720002860 申请日期 1972.04.28
申请人 DIAMOND SQUARED IND INC 发明人 VICKERY E
分类号 C01B31/06 主分类号 C01B31/06
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