Light emitting device and method for manufacturing same

摘要

A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.

主权项

1. A method for manufacturing a light emitting device comprising:
bonding end portions of first and second extraction electrodes of a semiconductor light emitting device to a mounting member, the semiconductor light emitting device includes a multilayer having a first surface and a second surface opposite to the first surface, and including a light emitting layer, the multilayer not including a substrate, a first electrode provided on a non-emitting region of the multilayer, a second electrode provided on the second surface of a stacked part including the light emitting layer of the multilayer, a first insulating film having openings conducting to the first electrode and the second electrode, a first metal interconnect layer connected to the first electrode, a second metal interconnect layer connected to the second electrode, the first extraction electrode provided on the second surface side and connected to the first metal interconnect layer, the first extraction electrode thicker than the multilayer, the end portion of the first extraction electrode not being bonded to a mounting member, the second extraction electrode provided on the second surface side and connected to the second metal interconnect layer, the second extraction electrode thicker than the multilayer, the end portion of the second extraction electrode not being bonded to a mounting member, a second insulating film provided between the first extraction electrode and the second extraction electrode, and thicker than the multilayer, and a layer provided on the first surface side of the multilayer without a substrate between the multilayer and the layer, the layer containing at least one of a phosphor and a resin, a part of the first metal interconnect layer facing to a part of the second surface of the stacked part including the light emitting layer of the multilayer with interposing the first insulating film between the part of the first metal interconnect layer and the part of the second surface of the stacked part of the multilayer, the part of the first metal interconnect layer extending toward the part of the second surface of the stacked part including the light emitting layer, and being provided between the first insulating film and the second insulating film, wherein a contact area between the first metal interconnect layer and the first extraction electrode is larger than a contact area between the first electrode and the first metal interconnect layer, the first insulating film surrounds a periphery of the multilayer.