| 主权项 |
1. A light emitting device, comprising:
a substrate; a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer provided on the substrate; a first electrode layer provided over the first conductive type semiconductor layer; and a second electrode layer provided over the second conductive type semiconductor layer, the second electrode layer having an energy band gap wider than an energy band gap of the active layer, wherein the second electrode layer and the second conductive type semiconductor layer form an integrated single layer structure, wherein an energy band gap of the second electrode layer is the same as an energy band gap of the second conductive type semiconductor layer, wherein the second conductivity type semiconductor layer comprises a semiconductor material containing aluminum, and wherein aluminum contained in the second conductive type semiconductor layer has a concentration gradient which increases as a distance from the active layer increases. |
