Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer

摘要

According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0

主权项

1. A semiconductor device comprising:
a foundation layer; and a first semiconductor layer of a first conductivity type, the first semiconductor layer being provided on the foundation layer and including a nitride semiconductor, wherein the foundation layer includes a multilayered buffer layer provided on a silicon substrate, the multilayered buffer layer includes a plurality of GaN layers and a plurality of AlN layers, the plurality of GaN layers and the plurality of AlN layers being alternately stacked, each of the plurality of AlN layers has an uneven part provided on an upper face thereof, and at least a part of at least one of the plurality of AlN layers has a dotted configuration through an entire thickness of the at least one of the plurality of AlN layers.