Interface between a I/III/VI2 layer and a back contact layer in a photovoltaic cell

摘要

The invention relates to a method of manufacturing a I-III-VI2 layer with photovoltaic properties, comprising:
deposition of a metal on a substrate to form a contact layer,deposition of a precursor of the photovoltaic layer, on the contact layer, andheat treatment of the precursor with an addition of element VI to form the I-III-VI2 layer.;The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer.;In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.

主权项

1. Method for fabricating a I-III-VI2 layer having photovoltaic properties, comprising:
deposition of molybdenum on a substrate to form a contact layer comprising a first sublayer and a second sublayer, said deposition comprising a first step during which the molybdenum is deposited to form said first sublayer and a second step during which the molybdenum and an additional element which is absent from the first sublayer are deposited to form said second sublayer and to form a compound, in the contact layer, acting as a barrier to the diffusion of an element VI, deposition of a precursor of the I-III-VI2 layer on the contact layer, and heat treatment of the precursor with an addition of the element VI to form the I-III-VI2 layer from said precursor, wherein, said heat treatment comprises forming a superficial layer between the second sublayer of the contact layer and the I-III-VI2 layer, said superficial layer comprising a compound combining the molybdenum of said contact layer and the element VI added during said heat treatment.