| 摘要 |
PROBLEM TO BE SOLVED: To enhance the quality relevant to the warpage of a wafer, by reducing the warpage of all wafers manufactured, without varying the warpage among the ingots grown.SOLUTION: In a method of manufacturing a silicon wafer by growing a columnar silicon single crystal ingot 11 by FZ method or CZ method, and then slicing this ingot 11, when slicing the ingot 11, the slicing direction of the ingot 11 for minimizing the warpage of the wafer is determined, with reference to one specific crystal habit line, out of a plurality of crystal habit lines appearing in the outer peripheral surface of the ingot 11, at intervals in the circumferential direction, and elongating in the longitudinal direction of the ingot 11.SELECTED DRAWING: Figure 1 |
