Semiconductor component prodn - with automatic precision mask location esp for fets

摘要

An insulating film of SiO or SiO2 is deposited on a Si substrate in the normal way and windows etched in it for the source and sink electrodes to be deposited on the exposed areas of the substrate, the windows having parallel adjacent edges. The contacts are then electroplated until there is an accurately controlled spread of metal over the edges of the windows. This defines the width of an exposed area of isthmus onto which the gate electrode finger is deposited, the distances from this third electrode to the source and sink regions thus being accurately defined.