SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving output characteristics without reducing pressure resistance characteristics against a conventional lateral IGBT, and to provide a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device includes: a P-type base region formed on a surface layer portion of an N-type semiconductor layer; an N-type emitter region formed on the inside of the P-type base region; a P-type collector region formed on the surface layer portion of the N-type semiconductor layer separately from the P-type base region; a gate insulation film formed on the surface of the N-type semiconductor layer and contacting with the P-type base region and the N-type emitter region; a gate electrode formed on the gate insulation film; and a columnar structure formed between the P-type base region and the P-type collector region in the N-type semiconductor layer and including an insulator connecting its one end to an N-type semiconductor extended to the surface layer portion of the N-type semiconductor layer and extending in a depth direction of the N-type semiconductor layer.SELECTED DRAWING: Figure 1