| 摘要 |
High frequency diodes are manufactured by methods in which extended dual means are formed upon semiconductor or other substrates, one mesa incorporating the active junction and another supporting the active mesa in reduced parasitic capacitive relation, with the substrate supporting the combination of mesas and with an efficient heat sink cooperating with the active mesa. Novel ring shaped diodes made according to the method feature a high degree of circular symmetry and therefore freedom from burn out, thermal compression bonding being used to perfect the bond between the active mesa and a diamond heat sink. Symmetry of the diode is assured by use of a photoresist mask generation technique employing a reduced rate of evaporation of the photoresist solvent.
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