| 发明名称 | Method for evaluating wafer defects | ||
| 摘要 | Provided is a method for evaluating defects in a wafer. The method for evaluating the wafer defects includes preparing a wafer sample, forming an oxidation layer on the wafer sample, measuring a diffusion distance of a minority carrier using a surface photovoltage (SPV), and determining results of a contamination degree. | ||
| 申请公布号 | US9500694(B2) | 申请公布日期 | 2016.11.22 |
| 申请号 | US201214129026 | 申请日期 | 2012.07.03 |
| 申请人 | LG Siltron Inc. | 发明人 | Ham Ho-Chan |
| 分类号 | C30B33/04;G01R31/12;C30B29/06;H01L21/66;G01R31/26 | 主分类号 | C30B33/04 |
| 代理机构 | Lewis Roca Rothgerber Christie LLP | 代理人 | Lewis Roca Rothgerber Christie LLP |
| 主权项 | 1. A method for evaluating defects in a wafer, the method comprising: preparing a wafer sample; forming an oxidation layer on the wafer sample; measuring a diffusion distance of a minority carrier using a surface photovoltage (SPV); and identifying results of a contamination degree, wherein a Pi zone is set to have a size of about 440 μm or more and a loop dominant point (LDP) defect zone is set to have a size of about 290 μm to about 440 μm when the minority carrier has a diffusion distance of about 450 μm or more in a state where the LDP defect zone is included. | ||
| 地址 | Gyeongsangbuk-do KR | ||