| 摘要 |
A method is described for making plural semiconductor devices containing a Schottky contact by providing on one side of a semiconductor wafer a metal layer to form the Schottky contact, and then subjecting the opposite side of the wafer to an etching treatment which attacks the semiconductor but not the Schottky metal until semiconductor portions are etched away leaving spaced semiconductor islands whose contact surface with the Schottky method is surrounded by free surface portions of the metal. Then the metal layer is severed along lines spaced from the islands to leave in the final device, an exposed metal surround to increase the breakdown voltage.
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