| 摘要 |
1342544 Depositing a chalcogenide glass STANDARD TELEPHONES & CABLES Ltd 28 Oct 1971 50082/71 Heading C1M A method of depositing on a substrate, such as silicon, a layer of a glass which contains selenium, tellurium and/or sulphur on a substrate in which a plasma is established by means of an applied electric field adjacent said surface in an atmosphere containing a mixture of compounds each including an element of the layer. Preferably the compounds are the hydroxides of each element. The atmosphere may additionally include a doping element and is maintained at a pressure below atmospheric. The electric field is applied by an alternating voltage preferably of radio frequency. Deposition may be controlled by a magnetic field to give even cover or concentrated in particular areas. Specific glasses described are Te 48 As 30 Ge 10 Si 12 ; Te 33 As 27 Ge 20 Si 20 and As 5 Se 6 Te 3 . |
