| 摘要 |
<p>Disclosed is a method for providing electronic semiconductor devices and the devices produced thereby utilizing an orientation dependent etch to selectively provide grooves in a monocrystalline silicon substrate having a crystal orientation of (110). By selectively etching with an orientation dependent etch to provide deep grooves having substantially parallel sidewalls and thereafter refilling with an appropriate material of the appropriate conductivity, a plurality of semiconductor electronic devices are provided.</p> |
