发明名称 THIN FILM CIRCUITS WITH INTERCONNECTING CONTACTS
摘要 In thin film circuits made of tantalum nitride an underlayer of tantalum is provided on the tantalum nitride layer before deposition of the contact metal layer. It is preferred to deposit the three layers in the same vacuum equipment, and to successively etch first the contacts and then the circuit pattern.
申请公布号 US3793175(A) 申请公布日期 1974.02.19
申请号 USD3793175 申请日期 1971.10.20
申请人 SOC LIGNES TEL,FR 发明人 JOLY J,FR;MOULIN M,FR
分类号 H01C7/18;H01L49/02;(IPC1-7):C23C15/00 主分类号 H01C7/18
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