| 摘要 |
Recovery of HCl and O2 in process for regenerating CuCl2-contg. etching soln. by removing CuCl soln. formed from etching compartment, oxidising CuCl with HCl and O2 and recycling half of regenerated CuCl2 soln. to etching compartment, is effected by (a) charging the other half of regenerated CuCl2 soln. to a cation exchanger and extracting Cu with formation of HCl, according to equation : CuCl2 + H2X CuX + 2 HCl, (where X is a divalent organic gp.); (b) recycling HCl to regenerating chamber; (c) reacting CuX formed with H2SO4 to form H2X, re - usable for Cu extn., and CuSO4, according to equation : CuX + H2SO4 H2X + CuSO4; (d) passing CuSO4 soln. formed to an electrolysis compartment and decomposing it to Cu, H2SO4 and O2 according to equation : CuSO4 + H2O + energy Cu + H2SO4 + 1/2 O2 and (e) recycling H2SO4 to cation exchanger and O2 to regenerating chamber. Pref. X is a resin, e.g. an epoxy resin, polystyrene or polyacrylate with -SO2H or -COOH gps. Process is useful in etching Cu or Cu alloys, e.g. in prodn. of printed circuits from Cu-coated insulators. |
