| 摘要 |
PROBLEM TO BE SOLVED: To provide a CdTe-based compound semiconductor that can increase a μτ(h) value of positive holes of a CdTe-based compound semiconductor having the same composition as high as possible, and that can suppress variation in the value, and to provide a radiation detection element using such a CdTe-based compound semiconductor.SOLUTION: Provided is a CdTe-based compound semiconductor substrate whose concentration of boron (B), which becomes a factor of reduction in a μτ(h) value of positive holes, is equal to or less than 20 atom ppb. Also provided is a semiconductor direct detection type radiation detection element manufactured by using a CdTe-based compound semiconductor whose concentration of boron (B) is equal to or less than 20 atom ppb.SELECTED DRAWING: Figure 2 |
