COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a method of manufacturing the same capable of suppressing a leakage current even when a high voltage is applied to a drain electrode.SOLUTION: A compound semiconductor device includes: a substrate 101; a nucleation layer 102 provided above the substrate 101; a first buffer layer 104 provided above the nucleation layer 102; a second buffer layer 103 provided between the nucleation layer 102 and the first buffer layer 104, and that includes an acceptor impurity element or a donor impurity element at a higher concentration than the first buffer layer 104; a carrier transit layer 105 provided so as to be contacted with the first buffer layer 104; a carrier supply layer 106 provided above the carrier transit layer 105; and a gate electrode 111, a source electrode 112 and a drain electrode 113 provided above the carrier supply layer 106.SELECTED DRAWING: Figure 1