METHOD AND APPARATUS FOR ELECTRON BEAM ALIGNMENT WITH A SUBSTRATE BY SCHOTTKY BARRIER CONTACTS

摘要

A method and apparatus are provided for precision alignment of an electron beam with selected areas of a major surface of a substrate. At least one and preferably two spaced apart detector marks of predetermined shape formed by Schottky barrier contacts are provided adjacent the major surface of the substrate. To align, an electron beam to be aligned has at least one alignment beam portion corresponding to at least one Schottky barrier contact detector mark and of predetermined cross-sectional shape. The electron beam is projected onto the major surface with the alignment beam portions thereof in the vicinity of corresponding Schottky barrier detector marks. An electrical signal is produced by each irradiated Schottky barrier contact corresponding to the area of the detector mark irradiated by an alignment beam portion. The electron beam is moved relative to the substrate to vary the electrical signal and is positioned where the electrical signal indicates optimum alignment of each alignment beam portion with a corresponding Schottky barrier detector mark. The method and apparatus is particularly suited for use in producing a very accurate component pattern in an electroresist layer on the major surface of the substrate with a patterned electron beam generated by a photocathode source.