| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor substrate capable of improving the yield of a semiconductor device.SOLUTION: A semiconductor substrate 10 has a main surface 1 and consists of a single crystal silicon carbide. The main surface 1 includes a central region 3 except a region within 5 mm from the outer periphery 2. When the central region 3 is divided into square regions 4 having a one side of 1 mm, a dislocation density having a Burgers vector parallel to a<0001>direction is 1×10cmor less even in any of the square regions 4.SELECTED DRAWING: Figure 1 |
