| 摘要 |
A terminal to which an input current is applied is connected to the base and the collector electrodes of a first transistor by a first and a second direct current conductive path, respectively. Each of these paths contains the same number of semiconductor junctions, poled to be forward biased by a fraction of the input current. The emitter-to-collector potential of the first transistor is applied to the base-emitter junction of a second transistor. The second transistor responds with a collector current which is proportional to the input current divided by substantially the following quantity: the common-emitter forward current gain (hfe) of the first transistor raised to an integral power.
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