THIN-FILM TRANSISTOR

摘要

Disclosed is a thin-film transistor, which includes a gate terminal, a source terminal, and a drain terminal. The source terminal and the drain terminal are arranged side-by-aide above the gate terminal. The source terminal includes a first edge. The drain terminal includes a second edge. The first edge and the second edge face each other. The first edge and the second edge form therebetween a channel. The first edge and the second edge are both in a nonlinear form. A dimension of the channel in an extension of the first edge and the second edge is a width of the channel. The channel is narrowed from a middle thereof toward two ends in the widthwise direction of the channel. Light transmittance in each portion of the channel of the thin-film transistor is made consistent and the quality of the thin-film transistor is enhanced.

主权项

1. A thin-film transistor, comprising a gate terminal, a source terminal, and a drain terminal, the source terminal and the drain terminal being arranged in a side-by-side manner above the gate terminal, the source terminal comprising a first edge, the drain terminal comprising a second edge, the first edge and the second edge facing each other, the first edge and the second edge forming therebetween a channel, wherein the first edge and the second edge are both in a nonlinear form, and wherein with a dimension of the channel extending in an extension direction of the first edge and the second edge being a width of the channel, the channel is narrowed from a middle thereof toward two ends in the widthwise direction of the channel.