| 摘要 |
<p>A radiation mask having a masking structure and a carrier therefore, for the production of structural configurations in photosensitive resists by x-ray radiation, with the carrier having registration marks thereon, in which the carrier comprises a layer of approximately 3 to 10 mu m in thickness, which layer is formed of material penetratable both by x-rays and by radiation in the visible part of the spectrum, the carrier material preferably being polyimide resin or silicon dioxide produced thermally or by a sputtering technique. In a further embodiment the carrier may comprise a first layer of silicon dioxide and a second supporting layer of polyimide resin.</p> |
