发明名称 Semiconductor light-emitting element
摘要 A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.
申请公布号 US9466763(B2) 申请公布日期 2016.10.11
申请号 US201414653813 申请日期 2014.06.10
申请人 Sharp Kabushiki Kaisha 发明人 Yamamoto Hiroaki;Ohmi Susumu;Weng Yufeng;Tanabe Kiminori
分类号 H01L33/12;H01L33/02;H01L33/22;H01L33/16;H01L33/00 主分类号 H01L33/12
代理机构 Morrison & Foerster LLP 代理人 Morrison & Foerster LLP
主权项 1. A semiconductor light-emitting element, comprising: a substrate; and a semiconductor stack portion provided on said substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer, said substrate having a property to allow transmission of light from said light-emitting layer, anda hexahedral shape including a first surface on which said semiconductor stack portion is provided, a second surface located opposite to said first surface, a pair of third surfaces orthogonal to said first surface and said second surface, and a pair of fourth surfaces orthogonal to said first surface and said second surface and different from said pair of third surfaces, said first surface having a projecting and recessed structure having a recess and a projection alternately formed, each of said third surfaces having a first reformed layer at a position distant by a first distance from said second surface, each of said fourth surfaces having two or more reformed layers, said recess and said projection being formed in said first surface such that light from said light-emitting layer propagates without being cut off by said projection in a direction parallel to said third surface while the light is cut off by said projection in a direction perpendicular to said third surface, and a number of said first reformed layers provided in each of said third surfaces being smaller than a number of said two or more reformed layers provided in each of said fourth surfaces.
地址 Osaka-shi JP