| 发明名称 | High-speed germanium on silicon avalanche photodiode | ||
| 摘要 | A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer. | ||
| 申请公布号 | US9478689(B2) | 申请公布日期 | 2016.10.25 |
| 申请号 | US201514961675 | 申请日期 | 2015.12.07 |
| 申请人 | SIFOTONICS TECHNOLOGIES CO., LTD. | 发明人 | Huang Mengyuan;Cai Pengfei;Wang Liangbo;Li Su;Chen Wang;Hong Ching-yin;Pan Dong |
| 分类号 | H01L31/107;H01L31/0392 | 主分类号 | H01L31/107 |
| 代理机构 | Han IP Corporation | 代理人 | Han IP Corporation ;Han Andy M. |
| 主权项 | 1. An apparatus, comprising: a germanium on silicon (Ge/Si) avalanche photodiode comprising: a substrate;a bottom contact layer disposed on the substrate;a buffer layer disposed on the bottom contact layer;an electric field control layer disposed on the buffer layer;an avalanche layer disposed on the electric field control layer;a charge layer disposed on the avalanche layer;an absorption layer disposed on the charge layer; anda top contact layer disposed on the absorption layer, wherein the electric field contact layer is configured to control an electric field in the avalanche layer. | ||
| 地址 | Grand Cayman KY | ||