| 主权项 |
1. A semiconductor device, comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on one surface of the first semiconductor layer; a third semiconductor layer of the first conductivity type selectively provided in the second semiconductor layer; a fourth semiconductor layer of the second conductivity type selectively provided in the second semiconductor layer so as to be adjacent and connected to the third semiconductor layer; trenches each penetrating the second semiconductor layer to reach the first semiconductor layer, dividing the second semiconductor layer into a base region and a floating region, the base region having the third and fourth semiconductor layers therein, one sidewall of each of the trenches abutting the third semiconductor layer; a fifth semiconductor layer of the second conductivity type provided below and electrically connected to another surface of the first semiconductor layer; an emitter electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer and electrically insulated from the floating region of the second semiconductor layer; a collector electrode electrically connected to the fifth semiconductor layer; a gate electrode provided in each of the trenches; a gate insulating film provided in each of the trenches between the corresponding gate electrode and the trench; a shield electrode provided over the floating region of the second semiconductor layer, the shield electrode being made of a material having an electrical resistivity lower than that of the gate electrode and being electrically connected to the gate electrode; and an insulating film provided between the shield electrode and the floating region of the second semiconductor layer. |
