| 摘要 |
1418969 Integrated circuits MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 16 Oct 1973 [16 Oct 1972] 48218/73 Heading H1K In making an integrated circuit, after diffusing impurity into regions at one face of a semiconductor wafer, the wafer is coated with an insulating layer and then with a photoresist layer having holes at specified positions. After etching the insulating layer to expose the wafer at the holes a metal layer is deposited overall to a thickness equal to that of the insulating layer, and the photoresist layer and overlying metal removed leaving the metal only in the holes. Finally metal strips are formed extending over and contacting this metal. As described the wafer is of N-type silicon with parallel diffused P + strips in its surface, the insulating layer of silicon dioxide 1 Á thick and the metal vapour deposited aluminium. The holes are located over the diffused strips and the metal strips, formed from an overall deposit by photoresist etching, are orthogonal to the diffused strips and of the same width as the holes. |
