Variable resistance element mfg. method - has semi-conductor and dielectric layers subjected to bombardment

摘要

The method uses a thin semi-conductor material layer, the resistance of which is enhanced by its being covered by some dielectric material, providing resistance values over a wide range. A backing or base plate (1) of some insulating material such as glass or ceramic has two connection electrodes (2, 3) in some low resistance metal, formed by vacuum deposition, chemical deposition etc. over and between these is deposited the semi-conductor material (4) which may be intrinsic or doped and this may be achieved by a cathodic bombardment technique. The cover layer (5) is of some dielectric material.