发明名称 Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action
摘要 A junction-isolated monolithic integrated circuit device has its component elements connected in a circuit configuration such that at least one of the isolation PN junctions may be forward-biased at least part of the time, while other isolation junctions remain reverse-biased. To prevent detrimental parasitic transistor action which may result from the injection of carriers across a forward-biased isolation junction, means are provided for collecting those carriers at a location close to the injecting junction.
申请公布号 US3931634(A) 申请公布日期 1976.01.06
申请号 US19730370051 申请日期 1973.06.14
申请人 RCA CORPORATION 发明人 KNIGHT, MARK BERWYN
分类号 H01L21/822;H01L21/761;H01L27/02;H01L27/04;H01L27/06;(IPC1-7):H01L27/04 主分类号 H01L21/822
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