发明名称 |
Semiconductor photoelectron emission device |
摘要 |
Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
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申请公布号 |
US3953880(A) |
申请公布日期 |
1976.04.27 |
申请号 |
US19740455231 |
申请日期 |
1974.03.27 |
申请人 |
HAMAMATSU TEREBI KABUSHIKI KAISHA |
发明人 |
HARA, KATSUO;HAGINO, MINORU;SUKEGAWA, TOKUZO |
分类号 |
H01J1/34;H01J9/12;H01J29/38;(IPC1-7):H01L27/14;H01L31/00;H01L29/16 |
主分类号 |
H01J1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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