METHOD OF MAKING HIGH PURITY SILICON CARBIDE PARTICLE,申请号JP19760035472-传众专利搜索

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发明名称	METHOD OF MAKING HIGH PURITY SILICON CARBIDE PARTICLE
摘要
申请公布号	JPS52117899(A)	申请公布日期	1977.10.03
申请号	JP19760035472	申请日期	1976.03.31
申请人	TOSHIBA CERAMICS CO	发明人	KIMURA NOBUO;SAKASHITA ISAO
分类号	C01B31/36	主分类号	C01B31/36
代理机构		代理人
主权项
地址

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