LOW VOLTAGE BREAKING PN JUNCTION STRUCTURE

摘要

A structure and process are disclosed for making a low-voltage breakdown p-n junction in a semiconductor substrate. The process comprises the step of etching a V-shaped groove in a semiconductor substrate of a first conductivity type, with an anistropic etchant, followed by depositing a layer of epitaxial semiconductor material of a second conductivity type in the V-shaped groove. There results a p-n junction with a small radius of curvature at the apex of the V-shaped groove having a correspondingly low breakdown voltage.