发明名称 |
METHOD OF MAKING A GERMANIUM PEROVSKITE/GERMANUIUM THIN-FILM TANDEM SOLAR CELL |
摘要 |
A method of making a non-toxic perovskite/inorganic thin-film tandem solar cell including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer. |
申请公布号 |
US2016322167(A1) |
申请公布日期 |
2016.11.03 |
申请号 |
US201615205418 |
申请日期 |
2016.07.08 |
申请人 |
Chaudhari Ashok |
发明人 |
Chaudhari Ashok |
分类号 |
H01G9/00;H01L31/18;H01L31/0725;H01G9/20;H01L31/0236;H01L31/028 |
主分类号 |
H01G9/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a germanium perovskite/crystalline germanium thin-film tandem solar cell comprising the steps of:
depositing a textured oxide buffer layer on glass, depositing a Sn—Ge film from a eutectic alloy on said buffer layer; and depositing perovskite elements on said Sn—Ge film, thus forming a perovskite layer based on said Ge from said Sn—Ge film, incorporating said Ge metal into said perovskite layer. |
地址 |
Briarcliff Manor NY US |