发明名称 METHOD OF MAKING A GERMANIUM PEROVSKITE/GERMANUIUM THIN-FILM TANDEM SOLAR CELL
摘要 A method of making a non-toxic perovskite/inorganic thin-film tandem solar cell including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer.
申请公布号 US2016322167(A1) 申请公布日期 2016.11.03
申请号 US201615205418 申请日期 2016.07.08
申请人 Chaudhari Ashok 发明人 Chaudhari Ashok
分类号 H01G9/00;H01L31/18;H01L31/0725;H01G9/20;H01L31/0236;H01L31/028 主分类号 H01G9/00
代理机构 代理人
主权项 1. A method of making a germanium perovskite/crystalline germanium thin-film tandem solar cell comprising the steps of: depositing a textured oxide buffer layer on glass, depositing a Sn—Ge film from a eutectic alloy on said buffer layer; and depositing perovskite elements on said Sn—Ge film, thus forming a perovskite layer based on said Ge from said Sn—Ge film, incorporating said Ge metal into said perovskite layer.
地址 Briarcliff Manor NY US