Semiconductor component with complementary pairs of FETs - has one FET produced in substrate and other in trough of opposite conduction type

摘要

A semiconductor components with complementary pairs of FETs consists of: a substrate of a first conduction type; a trough of opposite conduction type produced in the substrate by the ion implantation process: a first FET with source and drain zones of the opposite conduction type: and a second FET produced in the trough, with source and drain zones of the first conduction type. A layer (34) is produced by a second ion implantation, which covers the substrate surface except the first FET and the channel of the second FET (31) in the trough (22).