发明名称 Thyristor with protection against breakdown failure - has two PN functions with central areas parts closer to each other than outer area
摘要 <p>The thyristor has an SC substrate (10) of a first conduction type, forming with zones of opposite conduction type (11, 12) forming p-n junctions (16, 17) facing each other. These diffusion zones (11, 12) form the thyristor base and anode. A part (16', 17') of at least one of the junctions (16, 17) is nearer to the other junction 16, 17) than the rest of it. A control electrode (18) is opposite to the above part (16', 17') of the junction (16, 17) and forms a control zone shaped similarly to the above parts (16', 17') for the junction.</p>
申请公布号 DE2747945(A1) 申请公布日期 1978.05.18
申请号 DE19772747945 申请日期 1977.10.26
申请人 ELECTRIC POWER RESEARCH INSTITUTE,INC. 发明人 A.K. TEMPLE,VICTOR;JAYANT BALIGA,B.
分类号 H01L29/06;H01L29/08;H01L29/74;H01L31/111;(IPC1-7):H01L29/74 主分类号 H01L29/06
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