发明名称 |
Resist mask formation process with haloalkyl methacrylate copolymers |
摘要 |
A positive relief image is produced by coating a substrate with a layer of a copolymer containing about 90-98 mole percent of polymerized lower alkyl methacrylate units and about 2-10 mole percent of polymerized lower haloalkyl methacrylate units, heating the layer to cause cross-linking between polymer chains by removal of hydrogen halide, patternwise exposing the layer with high energy radiation such as a scanning electron beam, and removing the exposed portion of the layer with a solvent developer.
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申请公布号 |
US4096290(A) |
申请公布日期 |
1978.06.20 |
申请号 |
US19760729246 |
申请日期 |
1976.10.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FREDERICKS, EDWARD CARMINE |
分类号 |
G03F7/004;C08F20/00;C08F20/22;C09D133/10;C23C18/16;C23C18/31;C23F1/00;C25D5/02;G03F7/039;G03F7/38;H05K3/18 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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