发明名称 |
Anodizing a compound semiconductor |
摘要 |
A method of anodizing a compound semiconductor comprises (1) PLATING A METAL ON THE COMPOUND SEMICONDUCTOR, (2) CONTACTING THE EXPOSED SURFACE OF THE METAL WITH AN ELECTROLYTE WHICH PERMITS ANODIC OXIDATION OF THE METAL, AND (3) PASSING AN ELECTRIC CURRENT THROUGH THE ELECTROLYTE WITH THE EXPOSED SURFACE OF THE METAL ACTING AS AN ANODE, THE CURRENT DENSITY NOT EXCEEDING 100 MICROAMPS PER SQUARE CENTIMETER OF THE SURFACE AND THE QUANTITY OF CURRENT BEING MORE THAN SUFFICIENT TO OXIDIZE ANODICALLY ALL THE METAL.
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申请公布号 |
US4133724(A) |
申请公布日期 |
1979.01.09 |
申请号 |
US19770856094 |
申请日期 |
1977.11.30 |
申请人 |
NATIONAL RESEARCH DEVELOPMENT CORPORATION |
发明人 |
HARTNAGEL, HANS L.;HANNAH, STEPHEN J.;BAYRAKTAROGLU, BURHAN |
分类号 |
C25D11/02;C25D11/32;H01L21/316;(IPC1-7):C25D11/04;C25D11/34 |
主分类号 |
C25D11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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