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发明名称
INSULATED GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号
JPS5419678(A)
申请公布日期
1979.02.14
申请号
JP19770084777
申请日期
1977.07.15
申请人
FUJITSU LTD
发明人
ITOU TAKASHI;SHINODA MASAICHI
分类号
H01L29/78;H01L29/417
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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