Opto-electronic sensing system - has MIS capacitor with buried layer for each sensor, and also for read=out register

摘要

The sensor (20) has a MIS capacitor with a buried layer for each sensor on an SC chip, which collects optically produced charge carriers. A reading out register with a second MIS capacitor wit a buried layer collects charge carriers from the sensor. The two MIS capacitors without a gate electrode are coupled with each other owing to the two buried layers being directly adjacent with each other. The buried layers are uniformly doped layers, and the insulated layer thickness between the sensor electrode and the buried layer decreases towards the reading out register electrode.