发明名称 |
PROCEDE DE REALISATION D'UN DISPOSITIF A EFFET DE CHAMP AMELIORE. |
摘要 |
A SOI substrate is covered by a semiconductor material pattern which comprises a dividing pattern made from electrically insulating material. The dividing pattern is coated by one or more semiconductor materials. The semiconductor material pattern is covered by a gate electrode which faces the dividing pattern. The semiconductor material pattern and the gate pattern are covered by a covering layer. The substrate is eliminated to access the source/drain regions. A second covering layer is deposited and access vias are formed to access the source/drain regions and gate electrode. |
申请公布号 |
FR3030878(B1) |
申请公布日期 |
2016.12.30 |
申请号 |
FR20140062602 |
申请日期 |
2014.12.17 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
发明人 |
PREVITALI BERNARD |
分类号 |
H01L21/335 |
主分类号 |
H01L21/335 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|