Multi-refractory films for gallium arsenide devices

摘要

A method for constructing systems of refractory layers for use in making gallium arsenide (GaAs) semiconductor devices, having gold as the conducting electrode, which devices are thermally stable when thermally stressed up to about 600 DEG C. for approximately 24 hours. The method forms refractory layers of either tantalum-platinum-tantalum, or tungsten-platinum-tungsten, or titanium tungsten-platinum to develop both the Schottky barrier to GaAs and the diffusion barrier between gold and GaAs. Each of the refractories are individually deposited, at specific temperatures in the range of 50 DEG C. to 175 DEG C., on a GaAs wafer within a vacuum. The metalized wafer cools to room temperature and is removed from the vacuum. Contacts are then typically defined on the wafer and the wafer is subsequently bonded.