Reactive ion etching process for metals

摘要

Metal layers, for example; chromium and titanium-tungsten, used in conductive metallurgies as adhesion or barrier layers for integrated circuit devices which are formed in silicon semiconductor substrates, are selectively etched without significant attack on either the silicon substrate or aluminum conductor layers. The metal layers are exposed to a glow discharge formed by imposing an RF voltage across two spaced electrodes in an ambient atmosphere comprising a gaseous mixture of from about 5 to about 20 percent by volume of a polychlorinated organic compound containing one to two carbon atoms, for example, CCl4 or C2HCl3 and about 80 to about 95 percent by volume of oxygen at a pressure in the range of about 5 to 50 milli-torr.