| 摘要 |
FIELD: nanotechnology.SUBSTANCE: invention relates to methods of producing nanosized materials, specifically to production of hafnium dioxide with morphology of nanorods which is used in semiconductor industry as a material having high permittivity, as a catalyst substrate and photocatalyst in photocells, in making heat resistant, highly reflecting optical coatings, sensors, as well as photoluminescent material. Starting material used to produce hafnium dioxide nanorods is hafnium glycerolate. Method involves calcining hafnium glycerolate at 600-800 °C in an air current for 20-60 minutes.EFFECT: production of nano-sized hafnium dioxide without using hazardous or toxic ingredients.1 cl, 5 dwg, 3 ex |
