| 发明名称 |
FOTO-GALVANISCHE ELEMENTEN. |
| 摘要 |
<p>The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.</p> |
| 申请公布号 |
NL8004990(A) |
申请公布日期 |
1981.03.12 |
| 申请号 |
NL19800004990 |
申请日期 |
1980.09.03 |
| 申请人 |
E.N.I.- ENTE NAZIONALE IDROCARBURI TE ROME. |
发明人 |
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| 分类号 |
H01L31/04;H01L31/074;H01L31/18;(IPC1-7):01L31/06 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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