发明名称 MINIMIZATION OF STRAIN IN SINGLE CRYSTALS
摘要 <p>Single crystals are conveniently produced by directional solidification of a liquid body under a pressurized atmosphere and, preferably, under a liquid encapsulating layer to minimize loss due to volatilization. Such production entails a concern for internal stress in a grown crystal in the interest of minimization of breakage of wafers cut from a crystal. According to the invention, minimization of stress is accomplished by a post-growth annealing step during which pressure is reduced substantially, preferably to a pressure which does not exceed 50% of a pressure at which a constituent of the liquid body volatilizes, while substantially maintaining the temperature of the annealing step. The method may be applied for producing single crystals of semiconductor materials as may be used as device substrates. In particular, the method is beneficial for producing high-quality doped or undoped InP, GaP and GaAs single crystals. </p>
申请公布号 WO1981001016(A1) 申请公布日期 1981.04.16
申请号 US1980001147 申请日期 1980.09.08
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