发明名称 |
Switching device with laminar structure - has matching layer, amorphous semiconductor layers and poly-silicon insulating layer between top and bottom electrodes |
摘要 |
The switching device has a laminar structure comprising a bottom electrode, an insulating layer, an amorphous semiconductor and a top electrode. The insulating layer is made of polysilicon (3) and has a doped conduction channel (4) extending from the bottom electrode (2) to the amorphous semiconductor (5). A matching layer (8) is located at the boundaries between the amorphous semiconductor and the top and bottom electrodes (2,6) and prevents diffusion. |
申请公布号 |
DE3032566(A1) |
申请公布日期 |
1981.05.27 |
申请号 |
DE19803032566 |
申请日期 |
1980.08.29 |
申请人 |
VEB KOMBINAT ROBOTRON |
发明人 |
DIPPMANN,CHRISTIAN,DR.;TROELTZSCH,JOERG,DR.;LEIMBROCK,WOLFGANG,DR. |
分类号 |
H01L29/06;H01L45/00 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|